دیتاشیت MJD31C1G

MJD31 (NPN), MJD32 (PNP)

مشخصات دیتاشیت

نام دیتاشیت MJD31 (NPN), MJD32 (PNP)
حجم فایل 152.264 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت MJD31 (NPN), MJD32 (PNP)

MJD31 (NPN), MJD32 (PNP) Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi MJD31C1G
  • Transistor Type: NPN
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Collector Current (Ic): 3A
  • Power Dissipation (Pd): 15W
  • Transition Frequency (fT): 3MHz
  • DC Current Gain (hFE@Ic,Vce): 10@3A,4V
  • Collector Cut-Off Current (Icbo): 50uA
  • Collector-Emitter Breakdown Voltage (Vceo): 100V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.2V@3A,375mA
  • Package: IPAK
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 1.56W
  • Frequency - Transition: 3MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: I-PAK
  • Base Part Number: MJD31
  • detail: Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK

دیتاشیت محصولات مشابه